3 . 1 0 . 2 5 6. 9 0. 25 5. 9 0. 25 2. 3 0. 15 1. 3 0. 25 0.203max 7.8 0. 2 0.25 0.06 features m e c h an i c al d at a maximum ratings and electrical characteristics ratings at 25 o c ambient temperature unless otherwise specified b 5 4 0c b5 5 0c b 5 6 0c maximum recurrent peak reverse voltage v rrm 40 50 60 v ma x imu m rms v o lt a g e v r w s 28 35 42 v maximum dc blocking voltage v dc 40 50 60 v maximum average forw ord rectif ied current at c t l ( s e e f i g . 1) ( n o t e 2) i ( av) a peak f orw ard surge current 8.3ms single half - c sine-w ave superimposed on rated load(jedec c method) i f s m a maximum instantaneous f orw ard voltage at v 5 . 0 a ( n o t e . 1) v f v maximum dc reverse current @t a =25 o c at rated dc blockjing voltage(note1) @t a =100 o c r | ja r | jl o p e r at i ng j un c t i on and s to r age te m pe r a t u r e r ange t stg o c storage temperature range t j o c 0.5 5 0 . 0 1 0 . 0 i r note: 1.pulse test:300 | s pulse width,1%duty cy cle B520C-b560c 2. p . c . b . m o u n t e d w i t h 0 . 55 " x 0 . 55 " ( 1 4 . 0 x 14 . 0 m m 2 ) c o p p er p a d a r e a s reverse voltage: 20 --- 60 v cu r r e n t : 5 . 0 a ? built-in strain relief ? c a s e : j e d e c d o - 214 a b , m o l ded p l a s t i c o v er 1 11 1 pa ss i v a t ed c hip ? low power loss,high effciency ? p l a s t i c pa ck age h a s u nde r w r i t e r s labo r a t or 111 flammability classification 94v-0 typical thermal resitance (note2) o c/w b 5 3 0c ? high temperature soldering guaranteed:250 o c/10 1 11 seconds at terminals b 5 2 0c ? p o l a r i t y : c o l or band d e no t es c a t hode end ? w eigh t : 0 . 0 0 7 oun c e s , 0 . 21 g r am ma units 20 d o - 21 4 a b ( s m c ) ? low profile package ? for surface mounted applications 30 14 21 20 ? t e r m i nal s : s o l der p la t ed, s olde r able per m i l - s t d - 750, 1 11 1 m e t h od 2026 ? high current capability,low forward voltage drop 30 1 75 . 0 5 . 0 ? for use in low voltage high frequency inverters,free 111 wheeling and polarity protection applications ? guardring for overvoltage protection -65--- +150 -65--- +150 -65--- +150 0 . 5 0 0 . 7 0 20 ? metal silicon junction, majority carrier conduction ? high surge capability dimensions in millimeters barrier rectifiers surface mount schottky diode semiconductor korea www.diode.kr
resistive or inductive load 2.0 0 50 4.0 60 70 80 90 100 110 120 130 140 150 160 6.0 8.0 b5 2 0c - b5 4 0c b5 5 0c - b5 6 0c p.c.b.mounted on 0.55"x0.55"(14.0x14.0mm) copperpad areas 0 0.01 0.1 1 10.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 30.0 1.6 t j =125 c t j =150 c t j =25 c puise width=300 s 1%duty cycle b5 2 0c - b5 4 0c b5 5 0c - b5 6 0c o o o t j =125 c t j =25 c 0 0 t j =75 c 0 b5 2 0c - b5 4 0c b5 5 0c - b5 6 0c 1 0.001 0.01 0.1 20 10 20 0 406080100 t j =25 c f=1.0mhz vsig=50mvp-p b5 2 0c - b 5 4 0c b5 5 0c - b 5 6 0c o 1000 10 100 100 0.1 1.0 10 0.1 0.1 1 100 100 1 0.01 10 10 average forward rectified current,amperes peak forward surge current,amperes instantaneous forward current,amperes instantaneous reverse current,microamperes reverse voltage,volts pulse duration,sec fig.5-typi cal juncti on capaci tance fig. 6-- typi cal transi ent thermal i mpedance transient thermal impedance o c/w junction capacltance pf number of cycles at 60hz instantaneous forward voltage,volts percent of rated peak reverse voltage, ? ambient temperature ?? B520C-b560c fi g. 3 -- typi cal forward characteri sti cs fig.4 -- typi cal reverse characteristi cs fig. 1 -- forward derating curve fig. 2-- peak forward surge current 200 0 15 1 0 25 75 50 125 100 150 175 50 100 t j =t j max. 8.3ms single half sine-wave (jedec method) www.diode.kr diode semiconductor korea
|
